Design considerations for MRAM
نویسندگان
چکیده
considerations for MRAM T. M. Maffitt J. K. DeBrosse J. A. Gabric E. T. Gow M. C. Lamorey J. S. Parenteau D. R. Willmott M. A. Wood W. J. Gallagher MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented.
منابع مشابه
Design considerations and strategies for high-reliable STT-MRAM
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.07.001 ⇑ Corresponding author at: IEF, Bat 220, Univ. ParisTel.: +33 16915 6292; fax: +33 16915 4000. E-mail address: [email protected] (W.S. Zh Benefiting from Spin Transfer Torque (STT) switching approach, second generation of Magnetic RAM (MRAM) promises low power, great miniaturization prospective (<22 nm) a...
متن کاملArea, Power, and Latency Considerations of STT-MRAM to Substitute for Main Memory
STT-MRAM is one of the most promising non-volatile memory technologies with the potential of becoming a universal memory. However, because of its area, power and latency limitations, STT-MRAM is facing critical bottlenecks in substituting DRAM for main memory. Compared to modern DRAM technology, STT-MRAMs cell area and write power consumption are about four times larger and higher, respectively...
متن کاملDevelopment of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile random access memory. The initial focus is on the technological roots of the magnetic tunnel junction, and then on the recent progress made with engineered materials for this device. Following that, we...
متن کاملEmbedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM) is a candidate technology to replace SRAM, assuming...
متن کاملMagnetic memories: From DRAM replacement to ultra low power logic chips
The recent advent of spin transfer torque (STT) has shed a new light on MRAM with the promises of much improved performances and greater scalability to very advanced technology nodes. As a result, MRAM is now viewed as a credible solution for stand-alone and embedded applications where the combination of non-volatility, speed and endurance is key. Whereas the technology is nearing maturity for ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- IBM Journal of Research and Development
دوره 50 شماره
صفحات -
تاریخ انتشار 2006